44 results
Contributors
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- Book:
- The Cambridge Dictionary of Philosophy
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- 05 August 2015
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- 27 April 2015, pp ix-xxx
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Effect of Nickel Silicide Induced Dopant Segregation on Vertical Silicon Nanowire Diode Performance
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- MRS Online Proceedings Library Archive / Volume 1439 / 2012
- Published online by Cambridge University Press:
- 10 May 2012, pp. 89-94
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- 2012
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Contributors
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- Book:
- The Cambridge Dictionary of Christianity
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- 05 August 2012
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- 20 September 2010, pp xi-xliv
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Contributors
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- Maternal-Fetal Nutrition During Pregnancy and Lactation
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- 26 February 2010
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- 28 January 2010, pp vi-viii
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Enhanced Degradation in P+-Poly PMOSFETs With Oxynitride Gate Dielectrics Under Hot-Hole Injection
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- MRS Online Proceedings Library Archive / Volume 567 / 1999
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- 10 February 2011, 283
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- 1999
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Study of Thermal Stability of Cvd Ta205/Si Interface
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- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 473
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- 1999
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Ultrathin TiO2 Gate Dielectric Formation by Annealing of Sputtered Ti on Nitrogen Passivated Si Substrates in Nitric Oxide Ambient
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- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 481
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- 1999
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Ultra Thin High Quality Ta2O5 Gate Dielectrics Prepared by In-situ Rapid Thermal Processing
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- MRS Online Proceedings Library Archive / Volume 567 / 1999
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- 10 February 2011, 385
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- 1999
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Formation of High Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO
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- MRS Online Proceedings Library Archive / Volume 567 / 1999
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- 10 February 2011, 65
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- 1999
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N2O Oxidation Kinetics of Ultra Thin Thermally Grown Silicon Nitride: An Angle Resolved X-Ray Photoelectron Spectroscopy Study
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- Journal:
- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 107
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- 1999
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Thermal and Chemical Instability Between Iridium Gate Electrode and Ta205 Gate Dielectrics
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- MRS Online Proceedings Library Archive / Volume 567 / 1999
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- 10 February 2011, 489
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- 1999
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High Quality Ultra Thin CVD Si3N4Gate Dielectrics Fabricated By Rapid Thermal Process
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- MRS Online Proceedings Library Archive / Volume 567 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 83
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- 1999
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Oxidation Resistance of Ultrathin Silicon Nitride Passivation Layers on Si(100)
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- MRS Online Proceedings Library Archive / Volume 477 / 1997
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- 10 February 2011, 341
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- 1997
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Growth Chemistry of Ultrathin Silicon Nitride and Oxynitride Passivation Layers on Si(100)
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- MRS Online Proceedings Library Archive / Volume 477 / 1997
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- 10 February 2011, 335
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- 1997
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High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP
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- MRS Online Proceedings Library Archive / Volume 387 / 1995
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- 15 February 2011, 221
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- 1995
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Steady-State Versus Rapid Thermal Annealing of Phosphorusimplanted Pseudomorphic Si(100)/Ge0.12Si0.88
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- MRS Online Proceedings Library Archive / Volume 342 / 1994
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- 22 February 2011, 51
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- 1994
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Semi-Empirical Model for Boron Diffusion During Rapid Thermal Annealing of BF2 Implanted Silicon
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- MRS Online Proceedings Library Archive / Volume 303 / 1993
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- 21 February 2011, 277
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- 1993
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Modeling of Boron Diffusion and Activation for Nonequilibrium Rapid Thermal Annealing Application
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- MRS Online Proceedings Library Archive / Volume 303 / 1993
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- 21 February 2011, 259
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- 1993
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Boron Diffusion in Fluorine Preamorphized Silicon During Rapid Thermal Annealing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 303 / 1993
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- 21 February 2011, 253
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- 1993
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